| PART |
Description |
Maker |
| IRFH7928PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFB4410ZGPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IR710PBF INTERNATIONALRECTIFIER-IR710PBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
|
| IRFB4127PBF |
HEXFETPower MOSFET
High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
|
| IRFH3707PBF10 IRFH3707TR2PBF IRFH3707TRPBF IRFH370 |
HEXFETPower MOSFET
Applications
Synchronous Buck Converter for Computer Processor Power
|
International Rectifier
|
| IRLML0040TRPBF |
HEXFETpower MOSFET Compatible with existing Surface Mount Techniques Lower switching losses
|
TY Semiconductor Co., Ltd
|
| PVY116-T PVY116 |
HEXFETPower MOSFET Photovoltaic Relay Single-Pole, Normally-Open, 0-40V AC/DC, 250mA
Microelectronic Power IC
|
IRF[International Rectifier]
|
| IRFB4310PBF IRFS4310PBF IRFSL4310PBF IRFS4310RPBF |
HEXFET㈢Power MOSFET
HEXFET庐Power MOSFET
HEXFET?Power MOSFET
High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
|
| 2N7002K |
N-Ch; 60V (DS) MOSFET; add ESD protect function N沟道0V(D-S) MOSFET;补充的ESD保护功能
N-Channel 60-V (D-S) MOSFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| DF1-PD2428SCFB DF1B-10S-2.5R DF1B-11S-2.5R DF1B-12 |
MOSFET N-CH 600V 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 1KV 24A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 1KV 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 500V 44A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 500V 80A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
2.5mm Pitch Connector for Discrete Wire Connection (Product Compliant with UL/CSA Standard) 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
CAT6 SOL PC PVC BLU 50FT PVC SOLID PATCH CORD
MOSFET N-CH 500V 48A SOT-227B
MOSFET N-CH 200V 180A SOT-227B
MOSFET N-CH 300V 130A SOT-227B
MOSFET N-CH 500V 64A SOT-227
MOSFET N-CH 70V 200A SOT-227B
|
http://
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
